Role of resonant laser enhanced surface kinetics in the low substrate temperature molecular beam epitaxial growth of compound semiconductors: A Monte Carlo study-Reference-Cited by-同舟云学术

Role of resonant laser enhanced surface kinetics in the low substrate temperature molecular beam epitaxial growth of compound semiconductors: A Monte Carlo study

Published:1985-03-15 Issue:6 Volume:46 Page:577-579
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Singh Jasprit,Bajaj K. K.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.95545

Reference9 articles.

1. Growth of III–V semiconductors by molecular beam epitaxy and their properties

2. Morphology of Epitaxial Growth of GaAs by a Molecular Beam Method: The Observation of Surface Structures

3. Surface stoichiometry and structure of GaAs

4. Theoretical investigations of the nature of the normal and inverted GaAs–AlGaAs structures grown by molecular beam epitaxy

5. Role of arsenic (As2, As) in controlling the quality of GaAs grown by MBE: Theoretical studies

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Molecular beam epitaxy;Molecular Beam Epitaxy;2013

2. MBE growth of compound semiconductors: Part I. Stochastic modeling;Journal of Materials Research;1992-05

3. Variation of Hg incorporation in molecular‐beam epitaxially grown HgCdTe structures due to growth front roughness and misoriented substrates: Role of kink sites;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1989-07

4. Issues in molecular‐beam epitaxy kinetics of compound semiconductor based heterostructures;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1988-05

5. The nature of molecular beam epitaxial growth examined via computer simulations;Critical Reviews in Solid State and Materials Sciences;1988-01