The nature of molecular beam epitaxial growth examined via computer simulations-Reference-Cited by-同舟云学术

The nature of molecular beam epitaxial growth examined via computer simulations

Published:1988-01 Issue:1 Volume:14 Page:1-130
ISSN:1040-8436
Container-title:Critical Reviews in Solid State and Materials Sciences
language:en
Short-container-title:Critical Reviews in Solid State and Materials Sciences

Author:

Madhukar Anupam¹,Ghaisas Subhash V.²

Affiliation:

1. a Departments of Materials Science and Physics , University of Southern California , Los Angeles , California

2. b Department of Physics , University of Poona , Pune , India

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Condensed Matter Physics,General Chemical Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/01611598808241266

Reference125 articles.

1. Electronic properties of two-dimensional systems

2. Far from equilibrium vapour phase growth of lattice matched III–V compound semiconductor interfaces: Some basic concepts and monte-carlo computer simulations

Cited by 183 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomistic Aspects of Epitaxial Layer-Growth;Graduate Texts in Physics;2020

2. Phase-field method for epitaxial kinetics on surfaces;The Journal of Chemical Physics;2018-11-21

3. Si content variation and influence of deposition atmosphere in homoepitaxial Si-doped β-Ga2O3 films by pulsed laser deposition;APL Materials;2018-10

4. Monte Carlo Simulation of Epitaxial Growth;Epitaxy;2018-03-07

5. Optimization algorithm for rate equations with an application to epitaxial graphene;Journal of Physics: Condensed Matter;2014-04-23