Two-step growth of high-quality GaN by hydride vapor-phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Reference18 articles.
1. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN
2. Study on the growth rate in VPE of GaN
3. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
4. GaN Growth Using GaN Buffer Layer
5. Interface structure of hydride vapor phase epitaxial GaN grown with high-temperature reactively sputtered AlN buffer
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