Study of radiative recombination efficiency in 28–180‐Å‐wide AlGaAs/GaAs quantum wells grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Study of radiative recombination efficiency in 28–180‐Å‐wide AlGaAs/GaAs quantum wells grown by molecular beam epitaxy

Published:1994-04-15 Issue:8 Volume:75 Page:4152-4155
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Garbuzov D. Z.,Evtikhiev V. P.,Katsavets N. I.,Komissarov A. B.,Kudrik T. E.,Kudryashov I. V.,Khalfin V. B.,Bauer R. K.,Alferov Zh. I.,Bimberg D.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.357002

Reference14 articles.

1. Effect of the confinement-layer composition on the internal quantum efficiency and modulation response of quantum-well lasers

2. High speed quantum-well lasers and carrier transport effects

3. Minority‐carrier lifetimes and internal quantum efficiency of surface‐free GaAs

4. Reradiation effects, lifetimes and probabilities of band-to-band transitions in direct A3B5 compounds of GaAs type

5. Enhancement of nonradiative interface recombination in GaAs coupled quantum wells

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1. AlGaAs/GaAs multiquantum-well heterostructures for long-wavelength (8–10 μm) IR photodetectors;Technical Physics Letters;2012-05

2. The role of transport processes of nonequilibrium charge carriers in radiative properties of arrays of InAs/GaAs quantum dots;Semiconductors;2008-03

3. Observation of the biexponential ground-state decay time behavior in InAs self-assembled quantum dots grown on misoriented substrates;Applied Physics Letters;2005-05-23

4. Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates;Applied Physics Letters;2004-01-05

5. Photoluminescence internal quantum yield in superlattices;Superlattices and Microstructures;1998-02

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