Segregation and desorption kinetics for evaporation of arsenic from silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference13 articles.
1. Rate Limitation at the Surface for Impurity Diffusion in Semiconductors
2. Evaporation of Impurities from Semiconductors
3. Evaporation Velocity of Arsenic in Silicon
4. Low concentration diffusion in silicon under sealed tube conditions
5. Adsorbed Layer Model for Autodoping Mechanism in Silicon Epitaxial Growth
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The Enhanced Outdiffusion and Its Influence on the Impurity Behavior in the Implanted Si at Rapid Electron Beam Annealing;MRS Proceedings;1992
2. Studies of Surface Segregation Kinetics by Auger Electron Spectroscopy;Auger Electron Spectroscopy;1988
3. A theoretical model for combined surface segregation and evaporation;Surface Science;1985-02
4. Recent advances in silicon epitaxy and its application to high performance integrated circuits;Journal of Crystal Growth;1984-12
5. Surface Characterization of Arsenic Implanted Silicon (100): A New Insight into the Inhibition of Aluminum/Silicon Interdiffusion;MRS Proceedings;1984
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