Morphology of AlGaAs layer grown on GaAs(111)Asubstrate plane by organometallic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352141
Reference10 articles.
1. Deposition of GaAs Epitaxial Layers by Organometallic CVD: Temperature and Orientation Dependence
2. Orientation dependence of GaAs growth in low-pressure OMVPE
3. Deposition Mechanism of GaAs Epitaxy
4. Epitaxial Growth Mechanism of the (100) As Surface of GaAs -- The Effect of Positive Holes --
5. A Growth Analysis for Metalorganic Vapor Phase Epitaxy of GaAs
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3. Dependence of the properties of GaAs (111)A and Ga1-xAlxAs (111)A epitaxial layers on the conditions of their growth by organometallic vapor phase epitaxy;Functional Materials;2020-09-25
4. Formation of GaAs and Ga1−xAlxAs (0 ≤ x ≤ 0.3) layers on GaAs (111)A substrate by organometallic vapor phase epitaxy;Physica Scripta;2015-08-13
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