Temperature dependence of the GaNxP1−x band gap and effect of band crossover
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1522496
Reference12 articles.
1. GaN0.011P0.989 red light-emitting diodes directly grown on GaP substrates
2. Luminescence quenching and the formation of the GaP1−xNxalloy in GaP with increasing nitrogen content
3. Metalorganic vapor phase epitaxy of GaP1−xNxalloys on GaP
4. Composition dependence of interband transition intensities in GaPN, GaAsN, and GaPAs alloys
5. Evolution of III-V Nitride Alloy Electronic Structure: The Localized to Delocalized Transition
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