Interdiffusion in alloys of the GaInAsP system
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353808
Reference32 articles.
1. The Gallium-Phosphorus-Zinc Ternary Phase Diagram
2. Diffusion mechanisms and superlattice disordering in GaAs
3. Application of the charged point‐defect model to diffusion and interdiffusion in GaAs
4. Theoretical study of native defects and impurities in InP
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2. Indium distribution at the interfaces of (Ga,In)(N,As)∕GaAs quantum wells;Applied Physics Letters;2008-04-07
3. Comparison of Quantum Well Interdiffusion on Group III, Group V, and Combined Groups III and V Sublattices in GaAs-Based Structures;IEEE Journal of Selected Topics in Quantum Electronics;2008
4. Influence of SiO2and TiO2dielectric layers on the atomic intermixing of InxGa1−xAs/InP quantum well structures;Semiconductor Science and Technology;2007-07-20
5. Characterization of interdiffusion around miscibility gap of lattice matched InGaAs∕InP quantum wells by high resolution x-ray diffraction;Journal of Applied Physics;2007-01
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