Characterization of interdiffusion around miscibility gap of lattice matched InGaAs∕InP quantum wells by high resolution x-ray diffraction
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2404784
Reference17 articles.
1. Dislocation-Based Deformation Mechanisms in Metallic Nanolaminates
2. The role of grain size and selected microstructural parameters in strengthening fully lamellar TiAl alloys
3. Coherency Strain as an Athermal Strengthening Mechanism
4. Control of plasticity with coherency strain
5. On the diffusion of lattice matched InGaAs/InP microstructures
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1. Maintaining atomically smooth GaAs surfaces after high-temperature processing for precise interdiffusion analysis and materials engineering;Journal of Vacuum Science & Technology B;2021-12
2. Swift heavy ion irradiated InGaAs/InP multi quantum wells: Band-structure, interface and surface modifications;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-02
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