On the role of interface states in low-voltage leakage currents of metal–oxide–semiconductor structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1487450
Reference11 articles.
1. Stress induced leakage current analysis via quantum yield experiments
2. Suppressed shot noise in trap-assisted tunneling of metal–oxide–semiconductor capacitors
3. The role of native traps on the tunneling characteristics of ultra-thin (1.5–3 nm) oxides
4. Modeling and simulation of stress-induced leakage current in ultrathin SiO/sub 2/ films
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