Comparison of PdGeTiPt and NiGeAu ohmic contacts to n-GaAs and PdGeTiPt and TiPd contacts to p+-GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365973
Reference20 articles.
1. Alloyed ohmic contacts to GaAs
2. Electron microscope studies of an alloyed Au/Ni/Au‐Ge ohmic contact to GaAs
3. Morphology of Au/GaAs interfaces
4. Resistance of very small area ohmic contacts on GaAs
5. The collapse of current gain in multi-finger heterojunction bipolar transistors: its substrate temperature dependence, instability criteria, and modeling
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2. Ti/Pd/Ag Contacts to n-Type GaAs for High Current Density Devices;Journal of Electronic Materials;2016-03-14
3. Characterization of low-resistance ohmic contacts to n- and p-type InGaAs;Journal of Applied Physics;2013-07-28
4. Optimization of Ohmic metal contacts for advanced GaAs-based CMOS device;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-03
5. III–V multijunction solar cells for concentrating photovoltaics;Energy Environ. Sci.;2009
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