Voltage‐dependent scanning tunneling microscopy image of the GaInAs/InP multiquantum well structure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351924
Reference12 articles.
1. Tunneling microscopy and spectroscopy of molecular beam epitaxy grown GaAs‐AlGaAs interfaces
2. A scanning tunneling microscope using dual-axes inchworms for the observation of a cleaved semiconductor surface
3. Shape of the GaInAs/InP Multiquantum Well Potential Observed by Scanning Tunneling Microscopy
4. Scanning Tunneling Microscopy of Ga0.47In0.53As/InP Multiquantum Well Structures in Air
5. Surface electronic states in GaAs1−xPx>
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1. Micro through nanostructure investigations of polycrystalline CdTe: Correlations with processing and electronic structures;Solar Energy Materials and Solar Cells;1996-06
2. Cross‐sectional scanning tunneling microscopy and spectroscopy of passivated III–V heterostructures;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1994-07
3. Cross‐sectional scanning tunneling microscopy of doped and undoped AlGaAs/GaAs heterostructures;Applied Physics Letters;1994-01-24
4. Direct mapping of electronic structure acrossAl0.3Ga0.7As/GaAs heterojunctions: Band offsets, asymmetrical transition widths, and multiple-valley band structures;Physical Review Letters;1993-09-20
5. Scanning tunneling microscopy of GaInAs/InP multiquantum well (110) surfaces observed under an ultrahigh vacuum;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-07
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