Surface electronic states in GaAs1−xPx>
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference29 articles.
1. Influence of volume dope on Fermi level position at gallium arsenide surfaces
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4. Synchrotron radiation studies of electronic structure and surface chemistry of GaAs, GaSb, and InP
5. Work function variations of gallium arsenide cleaved single crystals
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1. Scanning tunneling microscope of the “16×2’’ reconstructed Si(110) surface;Journal of Applied Physics;1997-01-15
2. Line broadening in semiconductor core level photoemission induced by barrier height inhomogeneity;Surface Science;1995-07
3. Scanning tunneling microscopy of GaInAs/InP multiquantum well (110) surfaces observed under an ultrahigh vacuum;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-07
4. Voltage‐dependent scanning tunneling microscopy image of the GaInAs/InP multiquantum well structure;Journal of Applied Physics;1992-12-15
5. Shape of the GaInAs/InP Multiquantum Well Potential Observed by Scanning Tunneling Microscopy;Japanese Journal of Applied Physics;1991-09-01
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