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Short‐wavelength room‐temperature continuous‐wave laser operation of InAlP‐InGaP superlattices grown by metalorganic chemical vapor deposition

  • Published:1994-08-15 Issue:7 Volume:65 Page:854-856
  • ISSN:0003-6951
  • Container-title:Applied Physics Letters
  • language:en
  • Short-container-title:Appl. Phys. Lett.

Author:

Chelakara R. V.,Islam M. R.,Neff J. G.,Fertitta K. G.,Holmes A. L.,Ciuba F. J.,Dupuis R. D.,Richard T. A.,Holonyak N.,Hsieh K. C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm);Semiconductors;2019-12

2. Room temperature yellow InGaAlP quantum dot laser;Solid-State Electronics;2019-05

3. Design considerations for InGaAlP diode lasers on high-index substrates for the yellow and green spectral range;Novel In-Plane Semiconductor Lasers XVIII;2019-03-01

4. Room-temperature yellow-orange (In,Ga,Al)P–GaP laser diodes grown on (n11) GaAs substrates;Optics Express;2018-05-16

5. Measurement of the electron–hole pair creation energy in Al0.52In0.48P using X-ray radiation;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2018-01
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