Interfacial microstructure and electrical properties of the Pt/Ti ohmic contact inp‐In0.53Ga0.47As formed by rapid thermal processing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345018
Reference21 articles.
1. Pt/Ti/p‐InGaAsP nonalloyed ohmic contact formed by rapid thermal processing
2. Pt/Ti/p‐In0.53Ga0.47As low‐resistance nonalloyed ohmic contact formed by rapid thermal processing
3. AuBe/p‐InGaAsP contact formed by rapid thermal processing
4. Homogeneous degradation of surface emitting type InGaAsP/InP light emitting diodes
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