Variation of dislocation etch-pit geometry: An indicator of bulk microstructure and recombination activity in multicrystalline silicon
Author:
Funder
DOE
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4876445
Reference32 articles.
1. Spatially resolved modeling of the combined effect of dislocations and grain boundaries on minority carrier lifetime in multicrystalline silicon
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3. Recombination activity of contaminated dislocations in silicon: A model describing electron-beam-induced current contrast behavior
4. Measurement of the Normalized Recombination Strength of Dislocations in Multicrystalline Silicon Solar Cells
5. Modeling the effect of dislocations on the minority carrier diffusion length of a semiconductor
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