Quantum well lasers with carbon doped cladding layers grown by solid source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111164
Reference20 articles.
1. Effect of molecular-beam epitaxy growth conditions on GaAs–AlGaAs heterojunction bipolar transistor performance: Beryllium incorporation and device reliability
2. Stability of carbon and beryllium‐doped base GaAs/AlGaAs heterojunction bipolar transistors
3. Recombination‐enhanced impurity diffusion in Be‐doped GaAs
4. Reduced threshold current temperature dependence in double heterostructure lasers due to separate p-n and heterojunctions
5. Be redistribution during growth of GaAs and AlGaAs by molecular beam epitaxy
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1. A review of InP/InAlAs/InGaAs based transistors for high frequency applications;Superlattices and Microstructures;2015-10
2. High-efficient carbon-doped InGaAs/AlGaAs/GaAs quantum well lasers;Journal of Crystal Growth;2004-03
3. Carbon auto-doped AlGaAs/GaAs quantum well lasers;Journal of Crystal Growth;2003-08
4. InGaAs/GaAs/AlGaAs GRIN-SCH quantum-well lasers grown by solid-source molecular-beam epitaxy using CBr[sub 4] doping;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999
5. GaAs/AlGaAs heterojunction bipolar transistors with a base doping 10[sup 20] cm[sup −3] grown by solid-source molecular beam epitaxy using CBr[sub 4];Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-05
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