Anisotropic, meandering domain microstructure in the improper ferroelectric CsNbW2O9-Reference-Cited by-同舟云学术

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Anisotropic, meandering domain microstructure in the improper ferroelectric CsNbW2O9

Published:2020-10-01 Issue:10 Volume:8 Page:101108
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

McCartan Shane J.¹²^ORCID,Turner Patrick W.²,McNulty Jason A.³^ORCID,Maguire Jesi R.²^ORCID,McCluskey Conor J.²^ORCID,Morrison Finlay D.³^ORCID,Gregg J. Marty²^ORCID,MacLaren Ian¹^ORCID

Affiliation:

1. School of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ, United Kingdom

2. School of Mathematics and Physics, Queen’s University Belfast, Belfast BT7 1NN, United Kingdom

3. EaStCHEM School of Chemistry, University of St Andrews, St Andrews KY16 9ST, United Kingdom

Funder

Engineering and Physical Sciences Research Council

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0026040

Reference34 articles.

1. Sheet superconductivity in twin walls: experimental evidence of

2. Artificial chemical and magnetic structure at the domain walls of an epitaxial oxide

3. Direct Observation of Ferrielectricity at Ferroelastic Domain Boundaries in CaTiO3by Electron Microscopy

4. Ferroelectric Domain Wall Memristor

5. Conduction at domain walls in oxide multiferroics

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1. 100 years of ferroelectricity—A celebration;APL Materials;2021-07-01

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