Influence of Ga vacancies, Mn and O impurities on the ferromagnetic properties of GaN micro- and nanostructures-Reference-Cited by-同舟云学术

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Influence of Ga vacancies, Mn and O impurities on the ferromagnetic properties of GaN micro- and nanostructures

Published:2018-04-28 Issue:16 Volume:123 Page:161578
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Guzmán G.¹²^ORCID,Escudero R.³^ORCID,Silva R.⁴^ORCID,Herrera M.²^ORCID

Affiliation:

1. Centro de Investigación Científica y de Educación Superior de Ensenada, Posgrado en Física de Materiales, Ensenada, Baja California 22860, Mexico

2. Centro de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, Ensenada, 22800 Baja California, Mexico

3. Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Ciudad de México, Mexico

4. Instituto de Física, B. Universidad Autónoma de Puebla, Puebla 72571, Mexico

Funder

Universidad Nacional Autónoma de México

Consejo Nacional de Ciencia y Tecnología

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5006698

Reference44 articles.

1. High power GaN-based LEDs with low optical loss electrode structure

2. Electrical and microstructural analyses of 200 MeV Ag14+ion irradiated Ni/GaN Schottky barrier diode

3. Nonpolar light emitting diode with sharp near-ultraviolet emissions using hydrothermally grown ZnO on p-GaN

4. InGaN/GaN light-emitting diode with a polarization tunnel junction

5. Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

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4. Carbon and Manganese in Semi-Insulating Bulk GaN Crystals;Materials;2022-03-23

5. Orbital Hybridization Induced by Double‐Anion Coordination to Enhance Room‐Temperature Ferromagnetic Response;physica status solidi (RRL) – Rapid Research Letters;2022-03-02

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