Interplay of point defects, extended defects, and carrier localization in the efficiency droop of InGaN quantum wells light-emitting diodes investigated using spatially resolved electroluminescence and photoluminescence
Author:
Funder
DARPA
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4861150
Reference51 articles.
1. Research challenges to ultra-efficient inorganic solid-state lighting
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4. Efficiency droop in nitride-based light-emitting diodes
5. Auger recombination in InGaN measured by photoluminescence
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