Auger recombination via deep energy levels as a potential cause of efficiency droop in InGaN/GaN LEDs

Abstract

Abstract In the present work a mechanism of nonradiative radiation via deep energy levels is considered for InGaN/GaN LEDs from the first principles. The coefficient and time of such Auger recombination are evaluated numerically and are shown to be enough for causing the efficiency droop in blue and green InGaN/GaN LEDs.