Direct excitation spectroscopy of Er centers in porous silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120234
Reference17 articles.
1. Optical Activation of Ion Implanted Rare-Earths
2. Optically active erbium centers in silicon
3. Electrochemical Er doping of porous silicon and its room‐temperature luminescence at ∼1.54 μm
4. Strong room‐temperature infrared emission from Er‐implanted porous Si
5. Sharp 1.54 µm luminescence from porous erbium implanted silicon
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4. Optical activation of patterned Si nanowires grown from sol–gel prepared gold/Er-doped aluminous film;Applied Surface Science;2007-09
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