Antimony doping of Si layers grown by solid‐phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.88670
Reference4 articles.
1. Crystallization of Ge and Si in metal films. I
2. Solid‐phase transport and epitaxial growth of Ge and Si
3. Solid‐phase epitaxial growth of Si through palladium silicide layers
4. Solid-phase epitaxial growth of Ge layers
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1. Effects of shock waves on metal‐semiconductor interfaces;Journal of Applied Physics;1989-03-15
2. Miscellaneous Case Histories and Applications;Studies in Analytical Chemistry;1988
3. Non‐alloyed ohmic contact ton‐GaAs by solid phase epitaxy;Applied Physics Letters;1985-08
4. Pt and Pd Silicides and Pd Germanide as Contact Metallizations for GaAs;MRS Proceedings;1983
5. Formation and Characterization of Transition-Metal Silicides;Materials and Process Characterization;1983
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