The role of hydrogen in the deposition, composition, and structure of semi‐insulating polycrystalline silicon films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.335419
Reference14 articles.
1. Highly reliable high-voltage transistors by use of the SIPOS process
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5. A consideration of the effect of reactor parameters on the characteristics of layers prepared by low pressure chemical vapour deposition
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1. Study of the chemical and structural organization of SIPOS films at the nanometer scale by TEM–EELS and XPS;Materials Science and Engineering: B;2004-02
2. Low-Pressure Chemical Vapor Deposition of Semi-Insulating Polycrystalline Silicon (SIPOS) and its Analysis: Application to Power Diode Passivation;Solid State Phenomena;2001-11
3. Low-Pressure Chemical Vapor Deposition of Semi-insulating Polycrystalline Silicon Thin Films: I. Experimental Study and Proposal of New Kinetic Laws;Journal of The Electrochemical Society;2001
4. Hydrogen content in oxygen‐doped polysilicon film;Journal of Applied Physics;1994-05-15
5. Analysis of hydrogen in oxygen-doped polysilicon by 4He+-H elastic recoil detection;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-01
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