Electronic structure and magnetism of Mn-doped GaSb for spintronic applications: A DFT study-Reference-Cited by-同舟云学术

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Electronic structure and magnetism of Mn-doped GaSb for spintronic applications: A DFT study

Published:2016-08-07 Issue:5 Volume:120 Page:051704
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Seña N.¹^ORCID,Dussan A.¹,Mesa F.²,Castaño E.³,González-Hernández R.³

Affiliation:

1. Departamento de Física, Grupo de Materiales Nanoestructurados y sus Aplicaciones, Universidad Nacional de Colombia, Bogotá, Colombia

2. Facultad de Ciencias Naturales y Matemáticas, Grupo NanoTech, Universidad del Rosario, Bogotá, Colombia

3. Grupo de Investigación en Física Aplicada, Departamento de Física, Universidad del Norte, Barranquilla, Colombia

Funder

Departamento Administrativo de Ciencia, Tecnología e Innovación (COLCIENCIAS)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4958946

Reference35 articles.

1. Properties of ferromagnetic III–V semiconductors

2. Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

3. Ferromagnetism in III–V and II–VI semiconductor structures

4. The physics and technology of gallium antimonide: An emerging optoelectronic material

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4. A first-principles study of electronic and magnetic properties of 4d transition metals doped in Wurtzite GaN for spintronics applications;Journal of Molecular Modeling;2023-06-03

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