LOCALIZED ENHANCED DIFFUSION INnpnSILICON TRANSISTORS
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1754480
Reference9 articles.
1. Non-metallic solids. Vacancy enhanced diffusion in silicon. Effects of irradiation and of chemical impurities
2. Localized Enhanced Diffusion in NPN Silicon Structures
3. Distribution of Dislocations near the Junction Formed by Diffusion of Phosphorus in Silicon
4. New X‐Ray Diffraction Microscopy Technique for the Study of Imperfections in Semiconductor Crystals
5. Slip Patterns on Boron‐Doped Silicon Surfaces
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. On models of phosphorus diffusion in silicon;Journal of Applied Physics;1983-12
2. Silicon self‐interstitial supersaturation during phosphorus diffusion;Applied Physics Letters;1983-11-15
3. Study of diffusion of impurities in semiconductor silicon by activation analysis and nuclear reaction methods;Journal of Radioanalytical Chemistry;1976-09
4. Boron Diffusion Coefficient Increased by Phosphorus Diffusion;Journal of The Electrochemical Society;1974
5. Diffusion in Silicon and Germanium;Atomic Diffusion in Semiconductors;1973
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