Study of diffusion of impurities in semiconductor silicon by activation analysis and nuclear reaction methods-Reference-Cited by-同舟云学术

Study of diffusion of impurities in semiconductor silicon by activation analysis and nuclear reaction methods

Published:1976-09 Issue:2 Volume:30 Page:475-488
ISSN:0134-0719
Container-title:Journal of Radioanalytical Chemistry
language:en
Short-container-title:J. Radioanal. Chem.

Author:

Kotas P.,Obrusnik I.,Kvitek J.,Hnatowicz V.

Publisher

Springer Science and Business Media LLC

Subject

Health, Toxicology and Mutagenesis,Public Health, Environmental and Occupational Health,Spectroscopy,Pollution,Radiology, Nuclear Medicine and imaging,Nuclear Energy and Engineering,Analytical Chemistry

Link

http://link.springer.com/content/pdf/10.1007/BF02516983.pdf

Reference21 articles.

1. S. MAEKAWA, J. Phys. Soc. Japan, 17 (1962) 1592.

2. R. GERETH, G. H. SCHWULTKE, Appl. Phys. Letters, 8 (1966) 55.

3. C. F. GIBBONS, Proc. Symp. Silicon Device Processing, CH. P. MARDSEN (Ed.), Maryland, 1970, p. 21.

4. L. E. KATZ, Proc. Symp. Silicon Device Processing, CH. P. MARDSEN, (Ed.) Maryland, 1970, p. 192.

5. J. C. IRWIN, Proc. Symp Silicon Device Processing, CH. P. MARDSEN, (Ed.), Maryland, 1970, p. 99.

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