Enhanced Diffusion and Out‐Diffusion in Ion‐Implanted Silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1658431
Reference11 articles.
1. ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERING
2. Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering
3. Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling Technique
4. Diffusion Measurements in the System Cu-Au by Elastic Scattering
5. A gas-release study of the annealing of bombardment-induced disorder∗ (studies on bombardment-induced disorder—I)
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5. XPS study of ion-implanted arsenic in a-Si(H);Solar Energy Materials;1984-12
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