Reduction of stress-induced leakage currents in thin oxides by application of a low post-stress gate bias-Reference-Cited by-同舟云学术

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Reduction of stress-induced leakage currents in thin oxides by application of a low post-stress gate bias

Published:2000-09 Issue:5 Volume:88 Page:3087-3089
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ang C. H.,Ling C. H.,Cheng Z. Y.,Cho B. J.,Kim S. J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1287403

Reference14 articles.

1. The charging and discharging of high-voltage stress-generated traps in thin silicon oxide

2. Mechanism for stress‐induced leakage currents in thin silicon dioxide films

3. Conduction mechanism and origin of stress‐induced leakage current in thin silicon dioxide films

4. Modeling of stress-induced leakage current in ultrathin oxides with the trap-assisted tunneling mechanism

5. Annealing kinetics and reversibility of stress-induced leakage current in thin oxides

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. OXIDE WEAROUT, BREAKDOWN, AND RELIABILITY;International Journal of High Speed Electronics and Systems;2001-09

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