Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors-Reference-Cited by-同舟云学术

Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors

Published:2006 Issue:11 Volume:100 Page:114508
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Pérez-Tomás A.,Brosselard P.,Godignon P.,Millán J.,Mestres N.,Jennings M. R.,Covington J. A.,Mawby P. A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference20 articles.

1. P. G. Neudeck, D. J. Spry, R. S. Okojie, L. Y. Chen, G. M. Beheim, R. Meredith, T. Ferrier, and L. J. Evans , Presented in the SiC main specialist conference, ECSCRM 2006, 6th European Conference on Silicon Carbide and Related Materials (ECSCRM 2006), Newcastle, UK.

2. Ultrahigh-quality silicon carbide single crystals

3. Properties of Silicon Carbide, edited by G. L. Harris (INSPEC, London, 1995).

4. Effect of process variations and ambient temperature on electron mobility at the SiO/sub 2//4H-SiC interface

5. Electrical, structural, and chemical analysis of silicon carbide-based metal-oxide-semiconductor field-effect-transistors

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