Logic gates with a single Hall bar heterostructure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2362989
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4. DC and high frequency performance of 0.1 [micro sign]m n-type Si∕Si0.6Ge0.4 MODFET with fMAX=188 GHz at 300K and fMAX=230 GHz at 50K
5. Pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As HEMTs with an ultrahigh f/sub T/ of 562 GHz
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