Investigation of the thermal degradation mechanism for Cu/Au Schottky contacts to the InGaP layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1428789
Reference12 articles.
1. Effects of strained‐layer structures on the threshold current density of AlGaInP/GaInP visible lasers
2. High‐efficiency InGaP light‐emitting diodes on GaP substrates
3. High performances and reliability of novel GaAs MSM photodetectors with InGaP buffer and capping layers
4. Monolithic photoreceiver constructed with InGaP/GaAs/InGaP MSM photodetectors and conventional GaAs MESFETs
5. On the multiple negative-differential-resistance (MNDR) InGaP-GaAs resonant tunneling bipolar transistors
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Interfacial reactions of Pt-based Schottky contacts on InGaP;Applied Physics Letters;2008-02-25
2. Diffusion barrier of sputtered W film for Cu Schottky contacts on InGaP layer;Thin Solid Films;2004-12
3. Properties of Cu/Au Schottky contacts on InGaP layer;Journal of Applied Physics;2003-09-15
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