Assessment of hot‐hole‐induced interface states and trapped carriers in submicronn(metal–oxide semiconductor field effect transistors) by gate‐to‐drain capacitance measurement-Reference-Cited by-同舟云学术

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Assessment of hot‐hole‐induced interface states and trapped carriers in submicronn(metal–oxide semiconductor field effect transistors) by gate‐to‐drain capacitance measurement

Published:1994-08-29 Issue:9 Volume:65 Page:1139-1141
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ghodsi R.,Yeow Y. T.,Alam M. K.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.112121

Reference8 articles.

1. Interface state creation and charge trapping in the medium-to-high gate voltage range (V/sub d//2<or=V/sub g/>or=V/sub d/) during hot-carrier stressing of n-MOS transistors

2. Review of carrier injection in the silicon/silicon-dioxide system

3. A reliable approach to charge-pumping measurements in MOS transistors

4. Measurement and numerical modeling of short-channel MOSFET gate capacitances

5. Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurement

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nitrogen in Ultra Thin Dielectrics;Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices;1998

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