Review of carrier injection in the silicon/silicon-dioxide system
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
General Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/ip-g-2.1991.0064?crawler=true&mimetype=application/pdf
Reference42 articles.
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A p-channel MOS synapse transistor with self-convergent memory writes;IEEE Transactions on Electron Devices;2000
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3. A complementary pair of four-terminal silicon synapses;Analog Integrated Circuits and Signal Processing;1997
4. A single-transistor silicon synapse;IEEE Transactions on Electron Devices;1996
5. Assessment of hot‐hole‐induced interface states and trapped carriers in submicronn(metal–oxide semiconductor field effect transistors) by gate‐to‐drain capacitance measurement;Applied Physics Letters;1994-08-29
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