Quantum confinement effects on low‐dimensional electron mobility
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354127
Reference11 articles.
1. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions
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3. Multiple-channel GaAs/AlGaAs high electron mobility transistors
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5. Enhanced crystallographic selectivity in molecular beam epitaxial growth of GaAs on mesas and formation of (001)‐(111)Bfacet structures for edge quantum wires
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