The unexpected beneficial effect of the L-valley population on the electron mobility of GaAs nanowires
Author:
Affiliation:
1. Departamento de Electrónica, Universidad de Granada, Av. Fuentenueva S/N, 18071, Granada, Spain
Funder
Spanish Goverment
Universidad de Granada. CEI-BioTIC
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4906040
Reference25 articles.
1. Nanometre-scale electronics with III–V compound semiconductors
2. High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and $V_{\rm th}$ Tunability
3. Analysis and Comparison of L-Valley Transport in GaAs, GaSb, and Ge Ultrathin-Body Ballistic nMOSFETs
4. Effects of Surface Orientation on the Performance of Idealized III–V Thin-Body Ballistic n-MOSFETs
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