Thermal stability of Be‐, Mg‐, and Zn‐implanted layers in GaAs for high‐temperature device‐processing technology
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344200
Reference6 articles.
1. Transient thermal annealing in GaAs
2. Transient annealing of ion implanted GaAs
3. Calculation of projected ranges — analytical solutions and a simple general algorithm
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Component Evaporation, Defect Annealing, and Impurity Diffusion in the III–V Semiconductors;Rapid Thermal Processing of Semiconductors;1997
2. Photoluminescence investigation of Hg acceptor in GaAs;Applied Physics Letters;1995-09-04
3. Lattice site location and outdiffusion of mercury implanted in GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-07
4. Diffusion and deactivation characteristics in Be-implanted GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-03
5. As-Implanted and Annealing Behavior of Hand Be Implants in InP and Comparison with GaAs;MRS Proceedings;1991
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