Mechanism of reverse current increase of vertical-type diamond Schottky diodes-Reference-Cited by-同舟云学术

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Mechanism of reverse current increase of vertical-type diamond Schottky diodes

Published:2017-10-07 Issue:13 Volume:122 Page:135304
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Teraji T.¹,Fiori A.¹²^ORCID,Kiritani N.³,Tanimoto S.³⁴,Gheeraert E.²^ORCID,Koide Y.¹

Affiliation:

1. National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

2. Université Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, F38000 Grenoble, France

3. Nissan Motor Co., Ltd., 1, Natsushima, Yokosuka, Kanagawa 237-8523, Japan

4. Nissan Arc Ltd., 1, Natsushima, Yokosuka, Kanagawa 237-0061, Japan

Funder

Cross-ministerial Strategic Innovation Promotion Program

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4994570

Reference33 articles.

1. Exceptionally high voltage Schottky diamond diodes and low boron doping

2. Extreme dielectric strength in boron doped homoepitaxial diamond

3. Electric Field Breakdown of Lateral Schottky Diodes of Diamond

4. Increase in Reverse Operation Limit by Barrier Height Control of Diamond Schottky Barrier Diode

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3. From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices;Journal of Physics: Materials;2024-03-08

4. Single-crystal diamond growth by hot-filament CVD: a recent advances for doping, growth rate and defect controls;Functional Diamond;2023-09-29

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