Oxygen-vacancy-related dielectric relaxation in SrBi2Ta1.8V0.2O9 ferroelectrics
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1366657
Reference27 articles.
1. Fatigue-free ferroelectric capacitors with platinum electrodes
2. Novel fatigue-free layered structure ferroelectric thin films
3. Ferroelectric non-volatile memories for low-voltage, low-power applications
4. Oxide interfacial phases and the electrical properties of SrBi2Ta2O9 thin films prepared by plasma-enhanced metalorganic chemical vapor deposition
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