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Implant isolation of ZnO

Published:2003-03 Issue:5 Volume:93 Page:2972-2976
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kucheyev S. O.,Jagadish C.,Williams J. S.,Deenapanray P. N. K.,Yano Mitsuaki,Koike Kazuto,Sasa Shigehiko,Inoue Masataka,Ogata Ken-ichi

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1542939

Reference23 articles.

1. ZnO broadens the spectrum

2. ZnO broadens the spectrum

3. ZnO broadens the spectrum

4. Electrical isolation of ZnO by ion bombardment

5. Ion implantation for isolation of III-V semiconductors

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1. Characterization of ZnO Thin-film Transistors with Various Active Layer Structures after Exposure to Different Proton Energies;JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE;2024-04-30

2. Structural evolution of low-dimensional metal oxide semiconductors under external stress;Journal of Semiconductors;2022-04-01

3. Experimental exploration of the amphoteric defect model by cryogenic ion irradiation of a range of wide band gap oxide materials;Journal of Physics: Condensed Matter;2020-09-21

4. Au incorporation into various ZnO crystallographic cuts realised by ion implantation – ZnO damage characterization;Vacuum;2019-11

5. Proton Effect Test Compare to ZnO Thin-Film Transistors with Different Active Layer Structures;2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS);2019-09

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