Ordering of Ge islands on hill-patterned Si (001) templates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2898522
Reference19 articles.
1. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
2. Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes
3. Transition States Between Pyramids and Domes During Ge/Si Island Growth
4. Direct evaluation of composition profile, strain relaxation, and elastic energy of Ge:Si(001) self-assembled islands by anomalous x-ray scattering
5. Direct Determination of Strain and Composition Profiles in SiGe Islands by Anomalous X-Ray Diffraction at High Momentum Transfer
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1. Ordering of low-density Ge quantum dot on patterned Si substrate;Journal of Physics D: Applied Physics;2014-11-13
2. Effect of surface Si redistribution on the alignment of Ge dots grown on pit-patterned Si(001) substrates;Nanotechnology;2014-11-05
3. Highly uniform arrays of epitaxial Ge quantum dots with interdot spacing of 50 nm;Journal of Materials Research;2014-09-26
4. Restrictions of Si-based Ge nanodots from porous alumina membranes;Superlattices and Microstructures;2013-08
5. Growth and self-organization of SiGe nanostructures;Physics Reports;2013-01
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