Impact of growth conditions on vacancy-type defects in silicon–germanium structures grown by molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1897826
Reference8 articles.
1. Defects in SiGe
2. Electron microscopy study of microvoid generation in molecular-beam epitaxy-grown silicon
3. Point defects and dopant diffusion in silicon
4. Recent Advances in the Application of Slow Positron Beams to the Study of Ion Implantation Defects in Silicon
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