Stress and its effect on the interdiffusion in Si1−xGex/Si superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107455
Reference14 articles.
1. Improved minority‐carrier lifetime in Si/SiGe heterojunction bipolar transistors grown by molecular beam epitaxy
2. Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy
3. Growth and properties of Si/SiGe superlattices
4. Optical properties of quantum wires produced by strain patterning of GaAsAlGaAs quantum wells
5. Interdiffusion in a symmetrically strained Ge/Si superlattice
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