Characteristics of indium incorporation in InGaN/GaN multiple quantum wells grown on a-plane and c-plane GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4720507
Reference20 articles.
1. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
2. Visible light-emitting diodes using a-plane GaN–InGaN multiple quantum wells over r-plane sapphire
3. Electronic and optical properties of nonpolara-plane GaN quantum wells
4. Anisotropic structural characteristics of (112̄0) GaN templates and coalesced epitaxial lateral overgrown films deposited on (101̄2) sapphire
5. Anisotropy of a-plane GaN grown on r-plane sapphire by metalorganic chemical vapor deposition
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