The origin of deep-level impurity transitions in hexagonal boron nitride
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409, USA
Funder
U.S. Department of Energy (DOE)
U.S. Department of Homeland Security (DHS)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4905908
Reference37 articles.
1. Huge Excitonic Effects in Layered Hexagonal Boron Nitride
2. Arnaud, Lebègue, Rabiller, and Alouani Reply:
3. Excitons in Boron Nitride Nanotubes: Dimensionality Effects
4. Near band-gap photoluminescence properties of hexagonal boron nitride
5. Deep Ultraviolet Light-Emitting Hexagonal Boron Nitride Synthesized at Atmospheric Pressure
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