Gettering of Cu and Ni in mega-electron-volt ion-implanted epitaxial silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122455
Reference10 articles.
1. Iron gettering mechanisms in silicon
2. Gettering of Fe to below 1010 cm−3 in MeV self‐implanted Czochralski and float zone silicon
3. MeV-ion-induced damage in Si and its annealing
4. Oxygen gettering and precipitation at MeV Si+ ion implantation induced damage in silicon
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1. Influence of Nickel Impurity on the Operating Parameters of a Silicon Solar Cell;Russian Microelectronics;2024-04
2. Gettering of Cu in self-ion irradiated silicon studied by positron annihilation spectroscopy;Japanese Journal of Applied Physics;2019-08-08
3. Effects of electric field on polysilicon gettering of iron and copper in highly boron-doped silicon;Journal of Vacuum Science & Technology B;2018-05
4. Lattice location and thermal stability of implanted nickel in silicon studied by on-line emission channeling;Journal of Applied Physics;2014-01-14
5. Fe and Cu in Si: Lattice sites and trapping at implantation-related defects;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-12
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