Phase formation and stability of N+implanted SiC thin films

Author:

Capelletti R.,Miotello A.,Ossi P. M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Characterization of defects in n-type 4H-SiC after high-energy N ion implantation by RBS-channeling and Raman spectroscopy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2014-08

2. Structural and compositional complexity of nitrogen implantation in silicon carbide;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-02

3. Formation of CoN ultra-thin films during direct-current nitrogen ion sputtering in ultrahigh vacuum;Thin Solid Films;2011-03

4. Synthesis of silicon carbide nitride nanocomposite films by a simple electrochemical method;Electrochemistry Communications;2006-05

5. Amorphous structures of silicon carbonitride formed by high-dose nitrogen ion implantation into silicon carbide;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-05

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