Author:
Kummari Venkata C.,Reinert Tilo,Jiang Weilin,McDaniel Floyd D.,Rout Bibhudutta
Funder
National Science Foundation
Subject
Instrumentation,Nuclear and High Energy Physics
Reference13 articles.
1. SiC Schottky Diodes for Harsh Environment Space Applications
2. W. Lien, A.P. Pisano, D. Tsai, J. He, D.G. Senesky, in: Proceedings of the European Solid State Device Research Conference (ESSDERC), 2012, p. 234.
3. S. Ogata, K. Asano, Y. Sugawara, A. Tanaka, Y. Miyanagi, K. Nakayama, T. Izumi, T. Hayashi, M. Nishimura, in: International Power Electronics Conference (IPEC), 2010, p. 1929.
4. Defects in SiC for quantum computing
5. Formation of nitrogen-vacancy complexes during plasma-assisted nitrogen doping of epitaxial graphene on SiC(0001)
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献