Influence of P and As implantation of the formation of MoSi2
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.335583
Reference13 articles.
1. A new MoSi2/Thin poly-Si gate process technology without dielectric degradation of a gate oxide
2. Low-resistance MOS technology using self-aligned refractory silicidation
3. High-resolution Rutherford backscattering spectrometry and the analysis of very thin silicon nitride layers
4. Properties of Mo‐Silicides in Si‐Gate Technology
5. Refractory metal silicide formation induced by As+implantation
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2. Structural instability of the ion beam-mixed Au/Si(111) systems at elevated temperatures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-05
3. XPS studies on silicide formation in ion beam irradiated Au/Si system;Applied Surface Science;1997-11
4. Transition metal silicides in silicon technology;Reports on Progress in Physics;1993-11-01
5. Kinetics of ion-beam mixing at Ti-Si interfaces;Journal of Materials Science: Materials in Electronics;1990-08
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