Difference in charge transport properties of Ni-Nb thin films with native and artificial oxide-Reference-Cited by-同舟云学术

Difference in charge transport properties of Ni-Nb thin films with native and artificial oxide

Author:

Trifonov A. S.¹²,Lubenchenko A. V.³,Polkin V. I.⁴,Pavolotsky A. B.⁵^ORCID,Ketov S. V.⁶,Louzguine-Luzgin D. V.⁶

Affiliation:

1. Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, 1(2), Leninskie Gory, GSP-1, Moscow 119991, Russia

2. Physics Faculty, Lomonosov Moscow State University, Moscow 119991, Russia

3. Department of General Physics and Nuclear Fusion, National Research University "Moscow Power Engineering Institute," Moscow 111250, Russia

4. National University of Science and Technology “MISiS,” Moscow 119049, Russia

5. Chalmers University of Technology, Göteborg 41296, Sweden

6. WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

Funder

Russian Foundation for Basic Research (RFBR)

Ministry of Education and Science of the Russian Federation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

Reference29 articles.

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